RE200B PIR Human Infrared Radial Sensor Phototransistor

Model RE200B
Sensitive area of 2.0 1.0mm2 element substrate material
Silicon substrate thickness 0.5mm
Operating wavelength 7-14m
The average transmittance u003e 75%
The output signal u003e 2.5V (420 k blackbody 1Hz bandwidth modulation frequency 0.3-3.0Hz 72.5db gain )
Noise u003c200mV (mVp-p) (25 )
The balance of u003c 20%
Operating voltage 2.2-15V
Working current 8.5-24A (VD = 10V, Rs = 47k, 25 )
Source voltage 0.4-1.1V (VD = 10V, Rs = 47k, 25 )
Operating temperature -20 – + 70
Storage temperature -35 – + 80 field of 139 126
Description The sensor uses the polarization of pyroelectric material changes with temperature characteristics of the detection of infrared radiation sensitive element dual complementary method to suppress interference temperature changes , improve the work stability of the sensor .
Use
1. The above specifications are the source resistor R2 = 47K measured under conditions when the user using the sensor can be adjusted R2 size according to their needs .
2, note the location of the sensing element and the field size , in order to get the best optical design.
3 , all measurements are based on the voltage signal peak to peak calibration . B balance of EA and EB , respectively, peak to peak voltage of the sensing element output signal.
4 , the use of the sensor , the pins bending or welding parts should be more than 4mm from base .
5 , before the use of sensors , you should refer to the picture pins , in particular, to prevent a wrong pin